features l clear plastic package: 4.5 5.5 mm l 4-pin dip type l active area: 2.4 2.8 mm applications l optical switch, etc. photodiode si pin photodiode si pin photodiode for general photometry S4707-01 1 absolute maximum ratings (ta=25 c) parameter symbol value unit reverse voltage v r max.20 v operating temperature topr -25 to +85 c storage temperature tstg -40 to +100 c electrical and optical characteristics (ta=25 c) parameter symbol condition min. typ. max. unit spectral response range - 320 to 1100 - nm peak sensitivity wavelength p - 960 - nm photo sensitivity s = p0.50.6-a/w short circuit current isc 100 lx , 2856 k - 6.6 - a dark current i d v r =10 v - 0.08 5 na cut-off frequency fc v r =10 v, r l =50 ? -3 db, =780 nm - 20 - mhz terminal capacitance ct v r =10 v, f=1 mhz - 14 30 pf
si pin photodiode S4707-01 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?00 4 hamamatsu photonics k.k. cat. no. kpin1070e01 may 2004 dn 4.6 ?0.2 (including burr) 4.5 * 5.6 ?0.2 (including burr) 5.4 * (2 ) 10? (2 ) 3? 5.5 * photosensitive surface 0.7 1.0 2.0 nc cathode anode cathode (2 ) 5? 5.75 ?0.2 (2 ) 3? tolerance unless otherwise noted: ?.1, ?? shaded area indicates burr. chip position accuracy with respect to the package dimensions marked * x, y ?.2, ?? 2.54 (4 ) 0.5 (4 ) 0.7 (4 ) 0.25 (4 ) 7.5 ?5? (4 ) 4.5 ?0.4 2 spectral response kpinb0299ea dark current vs. reverse voltage kpinb0300ea terminal capacitance vs. reverse voltage kpinb0301ea 200 wavelength (nm) photo sensitivity (a/w) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 400 600 800 1000 1200 (typ. ta=25 ? c) qe=100 % 0.01 reverse voltage (v) dark current 10 pa 100 pa 1 na 0.1 1 10 100 (typ. ta=25 ? c) 0.1 reverse voltage (v) terminal capacitance 1 pf 100 pf 10 pf 1 nf 1 10 100 (typ. ta=25 ? c) dimensional outline (unit: mm) kpina0099ea
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